The invention addresses the challenge of simultaneous read and write operations in Spiking Neural Networks (SNN) that utilize a cross-bar architecture.

The invention presents an integrated, compact, and non-intrusive device for in situ flow measurements in rotating systems.

The invention presents a neuron oscillator that uses a thermal insulating device in conjunction with a resistor and a capacitor to produce self-sustained oscillations.

This patent outlines a method and system for optimizing surface parameters of substrates coated with thin films to improve their hydrophobic properties.

The proposed technology involves a synapse based on highly manufacturable Charge Trap Flash (CTF) Memory on Silicon-On-Insulator (SOI) technology.

This invention is a fiber-based mode converter utilizing a two-core fiber structure. The first core of the fiber is designed to support a single mode of Linearly Polarized (LP) modes and is used to receive input signals.

The patent discloses a method for modifying silicon (Si) surfaces to reduce reflections and enhance absorption across a broadband wavelength range (200 nm to 3300 nm).

The patent describes a method for fabricating a three-terminal resistive random-access memory (3T-RRAM) device.

The invention relates to a magnetron apparatus with an innovative strapping design that enhances mode separation by increasing the capacitance between straps.

This invention addresses the problem by characterizing the stochastic Set in PCMO RRAMs, leveraging the device's internal state (resistance) and external input (voltage pulse) for control.