A capacitor-less dynamic random access memory (DRAM) comprises a n-type semiconductor, a plurality of intrinsic semiconductor layers stacked above said n-type semiconductor, said intrinsic semiconductor layers are walled between a pair of Shallow

The present invention introduces a novel selection or access device for cross-point memory, specifically designed for bipolar memory technologies such as bipolar RRAM (Resistive Random-Access Memory) and STT RAM (Spin-Transfer Torque RAM).

The invention provides an apparatus for measuring cosmic ray flux integrated into a radiosonde telemetry system. It consists of a sensor that detects cosmic rays, producing a reverse current proportional to the energy or charge of the rays.

This invention addresses the complexity and cost issues in existing RRAM technologies by introducing a selector-less RRAM with integrated non-linearity within a single memory layer.

The invention provides a one-time programmable (OTP) memory device that integrates seamlessly with standard CMOS processes.

The invention pertains to a Medical Implant Communication Service (MICS) band receiver, which integrates a mixer circuit and a low noise amplifier (LNA) stacked together and operating with a shared bias current.

The patent describes a system and method for generating a random bit string in an integrated circuit using One-time Programmable Memory (OTPM) devices.

The invention addresses the challenge of simultaneous read and write operations in Spiking Neural Networks (SNN) that utilize a cross-bar architecture.

The invention presents an integrated, compact, and non-intrusive device for in situ flow measurements in rotating systems.

The invention presents a neuron oscillator that uses a thermal insulating device in conjunction with a resistor and a capacitor to produce self-sustained oscillations.