A novel organic thin film transistor (OTFT) has been developed for the selective detection of cyanide ions (CN-) using a dansyl-derivative, triazole-linked, glucopyranosyl conjugate (L) deposited on a semiconducting layer. The bilayer OTFTs exhibited favorable device characteristics: an electron mobility (μ) of 0.1 cm2 V−1 s−1, a threshold voltage (V_th) of -1 V, and an on/off ratio of five orders of magnitude. This device demonstrated sensitivity exclusively to CN- ions amidst various anions and cations. Detection was conducted using water-soluble tetra butyl ammonium cyanide at concentrations ranging from 10−3 M to 10−6 M, with a notable sensitivity down to 10−6 M (1 μM) of CN- in aqueous media. Additionally, the morphology of the semiconducting layer and L conjugate before and after reaction was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). X-ray photoelectron spectroscopy (XPS) measurements were also employed to determine the semiconductor's work function and characterize the final product for assessing transport properties across the semiconducting layer.
Figure (1) (A): illustrates a schematic diagram of SEM images of the sensing material before sensing CN5 , according to an embodiment as disclosed herein; (B): illustrates a schematic diagram of SEM images of sensing material after sensing CN- , according to an embodiment as disclosed herein;
Cyanide salts are prevalent chemicals commonly found in surface water, originating from both industrial waste and biological sources. Industries such as petrochemicals, metal electroplating, photography, gold mining, and steel manufacturing contribute significantly to cyanide pollution. Additionally, the production of nylon, nitriles, and acrylic plastics also leads to environmental contamination by cyanide ions. Cyanide adversely affects various bodily functions, including vascular, central nervous, visual, endocrine, cardiac, and metabolic systems. Given its toxic effects, detecting cyanide ions is crucial for safeguarding human health and the environment.
- Developed a stable organic thin-film transistor (OTFT) incorporating silica for the gate, ZrO2 as the dielectric layer, P3HT as the semiconductor, L (CN- sensor) for cyanide ion detection, and Au electrodes for the source and drain
- Selectively detects cyanide ions in aqueous media
- Achieved reproducibility of the device through careful washing with acetone after each use.
- Fabricated flexible OTFT on an ITO sheet to enhance device usability
- Ensures specific and selective detection, minimizing uncertainties and errors in assessing cyanide toxicity
OTFT was fabricated on silicon wafer, which acts as gate electrode and on the top of this ZrO2 (3 wt %) has been spin coated at 2000 rpm for 30 sec. ZrO2 is good inorganic dielectric material and can used in the transistor making. Further P-type semiconductor P3HT (4 wt %) was spin coated on the dielectric layer at 4000 rpm at 60 sec. Later, source and drain Au electrodes (thickness: 60 nm) were thermally evaporated through a shadow mask [channel width (W): 200 lm; channel length (L): 2000 lm; pressure: 5 x 10-6 torr]. After testing transistor in good condition, it was used sensing application. Now cyanide sensor molecule L (0.1 M solution) was used to spin coat on semiconductor layer at 2000 rpm for 30 sec. L spin coated device was employed to sense cyanide ions in aqueous of different concentration.
The device was able to measure till 1 μM (10-6 M) of cyanide in water.
The technology is currently available for licensing.
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The invention helps to detect Cyanide ion which occurs in different industries. Cyanide ion is highly toxic to humans and the environment, and this invention is important for safeguarding human health and the environment.
The cyanide ion is produced in various industries such as Petrochemical, Metal Electroplating, Photographic, Gold Mining, Steel Manufacturing, Polymer, Biomedical Companies. This invention is beneficial to these industries as it will help them detect cyanide ion and prevent it from spreading.
Geography of IP
Type of IP
201621032197
459224