This proposal introduces a new mechanism for a radio-frequency (rf) oscillator using a magnetic domain wall's self-oscillation. By applying a uniform static magnetic field and a non-uniform vertical dc spin current, stable oscillations are achieved, which can be used in nanoelectronics. The domain wall oscillates between two unstable positions, driven alternately by the magnetic field and the spin current. These oscillations are stable under noise and can achieve a high quality factor. The proposed device could also advance racetrack memory and other nanoelectronic applications, demonstrating significant potential for future all-domain wall logic systems.
The problem at hand is to develop a robust and tunable radio-frequency oscillator using the self-oscillation of a magnetic domain wall. This involves overcoming challenges related to maintaining stable oscillations under a uniform static magnetic field and a spatially non-uniform vertical DC spin current, while ensuring that the oscillations are not affected by noise and drift.
- Self-oscillation mechanism: Provides stable, tunable of oscillations without requiring external periodic sources, making it ideal for consistent waveform generation.
- Magnetic domain wall translation: Enables periodic motion between unstable positions, ensuring reliable and repeatable oscillatory behavior.
- High-quality factor: Exhibits a quality factor of over 1000, which ensures minimal energy loss and high precision in oscillations.
- Noise stability: Remains stable under noise, maintaining consistent performance in varied environments.
- Independent of input spin current: The amplitude and waveform are largely unaffected by input spin current, allowing for accurate and predictable oscillatory waveforms.
- Vertical spin current utilization: Uses a non-uniform vertical dc spin current to drive oscillations, simplifying the design and enhancing device efficiency.
The prototype is a radio-frequency oscillator based on a magnetic domain wall that self-oscillates under a uniform magnetic field and a non-uniform vertical DC spin current. It achieves stable, high-quality oscillations without external periodic sources. The behavior is modeled using micromagnetic simulations governed by the Landau-Lifshitz-Gilbert equation and Slonczewski torque.
The patent is granted
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- Advances in nanoelectronics through improved domain wall oscillators can enhance the performance and efficiency of electronic devices.
- Development of stable RF oscillators can lead to better communication technologies, benefiting industries and consumers alike.
- Contributions to the racetrack memory architecture can revolutionize data storage solutions, offering faster and more reliable memory options.
- Innovations in digital and analog switching paradigms can improve the functionality and versatility of electronic circuits and systems.
- Practical applications of self-oscillating domain walls can pave the way for new technologies in all-domain wall logic schemes, potentially transforming computing methodologies.
Nanoelectronics, Racetrack Memory, Digital Switching, Analog Switching, Micromagnetic Simulation, Domain Wall Logic, Noise Analysis
Geography of IP
Type of IP
3395/MUM/2015
419613