The patent describes a method for fabricating a three-terminal resistive random-access memory (3T-RRAM) device. This device aims to improve in-memory computing by integrating logical operations within the memory, addressing the von Neumann bottleneck, which limits conventional computing performance due to data transfer inefficiencies between the processor and memory.
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- Enhances the performance and efficiency of AI and data-intensive applications, potentially accelerating advancements in these fields.
- Reduces energy consumption in data centers, contributing to greener technology solutions.
- Improves the capabilities of consumer electronics and IoT devices, leading to better user experiences and more advanced functionalities.
- Three contacts that serve as both input and output terminals.
- Fabrication involves multiple layers, including silicon, silicon dioxide, titanium, platinum, zirconium dioxide, and PCMO.
- Single write cycle for logical operations with voltage input and resistance output.
- Reduces communication overhead between processor and memory.
- Increases energy efficiency and reduces latency in data-intensive tasks.
- Simplifies device architecture by reducing the number of required components and operations.
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The functionality of handling logic operation in a 3-terminal memory device has been demonstrated. The logic operation requires a single input and a single compute cycle. The optimization of the material composition of the memory device for low-power in-memory computing is ongoing.
- Artificial Intelligence (AI)
- Data centers and cloud computing
- High-performance computing (HPC)
- Consumer electronics
- IoT (Internet of Things) devices
- AI and machine learning tasks
- Data storage and processing in data centers
- Real-time data analytics
- Embedded systems in consumer electronics
- IoT devices requiring efficient data processing and storage