This invention focuses on enhancing the performance of silicon solar cells by improving the quality of silicon nitride films used as anti-reflective coatings and passivation layers. Traditional PECVD (Plasma-enhanced chemical vapor deposition) silicon nitride films often have defects like pinholes, which can cause issues during further processing. The proposed method involves post-deposition plasma treatments using argon (Ar), nitrous oxide (N2O), or a combination of both. These treatments increase the film's density, reduce defects, and improve the interface quality between silicon and silicon nitride. As a result, the minority carrier lifetime in silicon is significantly enhanced, leading to better solar cell efficiency and stability even at high temperatures.
Type of IP
Faculty
Department
- Increased Solar Cell Efficiency: Higher efficiency in solar cells leads to more effective harnessing of solar energy, contributing to greater adoption of renewable energy sources.
- Enhanced Longevity of Solar Cells:Longer-lasting solar cells reduce the frequency of replacements, lowering electronic waste and environmental impact.
- Cost-Effective Energy Solutions:Improved performance and stability of solar cells make solar energy more cost-competitive, increasing accessibility for a broader population.
- Reduction in Fossil Fuel Dependence:Higher efficiency and reliability of solar cells encourage the shift from fossil fuels to sustainable energy, decreasing greenhouse gas emissions.
- Promotion of Green Technology:Advances in solar cell technology foster innovation in green technologies, supporting environmental sustainability initiatives.
- Post-Deposition Plasma Treatment Using Ar, N2O, or Ar+N2O: This method enhances the density of PECVD(Plasma-enhanced chemical vapor deposition) silicon nitride films, which reduces pinholes and minimizes defects during further processing, leading to more reliable solar cell performance
- Significant Reduction in Interface State Density: Achieved through specific plasma treatments, this reduction improves the electrical properties at the silicon-silicon nitride interface, resulting in better efficiency and performance of solar cells
- Enhanced Minority Carrier Lifetime: Plasma treatments significantly increase the minority carrier lifetime, contributing to higher efficiency and longer operational life of silicon solar cells
- Improved Surface Passivation: The treatments improve the passivation of the silicon emitter surface, which enhances the overall effectiveness of the anti-reflective coating and boosts solar cell efficiency
- Stability at High Temperatures: The enhanced passivation remains stable up to 450°C, ensuring that solar cells maintain their performance and durability in various environmental conditions
- Reduction in Background Plating: Using oxidizing species treatment reduces unwanted background plating, which prevents defects and ensures the integrity of the silicon wafer during metallization processes
- Versatility of Plasma Treatments: The ability to use Ar, N2O, or a combination of both provides flexibility in the treatment process, allowing for tailored improvements in film density and interface quality, adaptable to different manufacturing needs
4
Solar Energy , Semiconductor, Electronics Manufacturing, Renewable Energy Sector, Photovoltaic Industry, Energy Storage Industry
Silicon solar cells, renewable energy, electronic waste reduction, green technology, CMOS technology, semiconductor manufacturing, metallization processes, energy independence