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Industrial Research And Consultancy Centre
Patent
Current-Mode CMOS Voltage Reference with Low Sensitivity to Process, Supply Voltage and Temperature Variations
Abstract

This invention introduces a new type of electronic circuit, a current-mode CMOS voltage reference, which provides a stable and reliable voltage output despite changes in manufacturing, power supply, and temperature. It achieves this without needing costly adjustments or noisy mechanisms, making it ideal for low-power, low-cost applications like wearable medical devices, wireless sensors, and other portable electronics. Operating efficiently at just 1 volt and consuming minimal power, this invention extends battery life and ensures consistent performance in various conditions.

Uniqueness of the Solution
  • Subthreshold Operation: Utilizes subthreshold HVT and RVT NMOS transistors to achieve process insensitivity. Tail-less Op-Amp Design: Employs tail-less op-amps to enhance supply voltage insensitivity. 
  • PVT Independence: Achieves low sensitivity to process, supply voltage, and temperature (PVT) variations.
  • No Trimming or Switching: Maintains accurate voltage reference without the need for costly trimming or noisy switching mechanisms. 
  • Ultra-Low Power Consumption: Operates at a minimum supply voltage of 1V, drawing a maximum current of only 577nA. 
  • High Precision: Delivers a temperature coefficient of 4 ppm/°C and line sensitivity of 0.026%/V, ensuring stable performance.
  • Subthreshold Operation: Utilizes subthreshold HVT and RVT NMOS transistors to achieve process insensitivity. Tail-less Op-Amp Design: Employs tail-less op-amps to enhance supply voltage insensitivity. 
  • PVT Independence: Achieves low sensitivity to process, supply voltage, and temperature (PVT) variations.
  • No Trimming or Switching: Maintains accurate voltage reference without the need for costly trimming or noisy switching mechanisms. 
  • Ultra-Low Power Consumption: Operates at a minimum supply voltage of 1V, drawing a maximum current of only 577nA. 
  • High Precision: Delivers a temperature coefficient of 4 ppm/°C and line sensitivity of 0.026%/V, ensuring stable performance.
Prototype Details

Fabricated and tested silicon chip in the lab environment and an early prototype has been developed.

Current Status of Technology

Tested in a lab environment and an early prototype has been developed.

Technology readiness level

4

Societal Impact
  • Extended Battery Life: This invention helps portable devices like medical gadgets and sensors last longer between charges by using very little power. 
  • Increased Reliability: It ensures electronic devices work reliably under varying conditions, which is crucial for critical applications like biomedical implants.
Relevant Industries, Domains and Applications

Wearable Technology, Medical Devices, Wireless Sensors, Consumer Electronics, Energy Harvesting Systems

Applications or Domain
  • Portable Medical Devices: Ensures reliable operation and extended battery life for wearable health monitors and implants. 
  • Wireless Sensors: Provides stable voltage references for low-power sensors used in smart homes and environmental monitoring.

Geography of IP

Type of IP

Application Number

2513/MUM/2014

Filing Date
Grant Number

403746

Grant Date
Assignee(s)
Indian Institute of Technology Bombay

IP Themes