Method of simultaneously forming low resistance metal contacts on n and p-type semiconductors

The present invention describes a method of forming, low resistance metal-interfacial layer-semiconductor (MIS) contact simultaneously on n or p-type semiconductor in a single process. The method of fabricating both n-type and p-type contact simultaneously using interfacial dipoles is used to achieve by decreasing depletion width W or lowering barrier height Oh as well as decrease in depletion width W.