Rapid thermal processing system

Specifications/Features

• Wafer sizes: 2", 3", 4", 5" and 6" wafers (Si wafer only)

• Ramp up rate: Programmable, 10°C to 200°C per second

• Recommended steady state duration: 0-300 seconds per step

• Ramp down rate: Non-programmable, 25°Cto 50°C per second.

• Thermocouple temperature accuracy: ±0.5°C

• Temperature uniformity: +5°C across a 6” (150 mm) wafer at 1100°C

• Temperature repeatability: ±0.5°C or better at 1100°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)

• Process/purge gas inputs: Nitrogen (N₂ ),Oxygen (O₂ ), Argon (Ar)