Rapid thermal processing system


Rapid thermal processing tool is capable of manual loading of single wafer processing.

Make and Model

Allwin 21, AW 610


  • Wafer sizes: 2", 3", 4", 5" and 6" wafers (Si wafer only)

  • Ramp up rate: Programmable, 10°C to 200°C per second

  • Recommended steady state duration: 0-300 seconds per step

  • Ramp down rate: Non-programmable, 25°Cto 50°C per second.

  • Thermocouple temperature accuracy: ±0.5°C

  • Temperature uniformity: +5°C across a 6” (150 mm) wafer at 1100°C

  • Temperature repeatability: ±0.5°C or better at 1100°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)

  • Process/purge gas inputs: Nitrogen (N2 ),Oxygen (O2 ), Argon (Ar)

Facility in-charge

Contact Email

anilkg[at] ee[dot] iitb[dot] ac[dot] in


NCPRE Fabrication Lab, 2nd Floor, Nanoelectronics Building Department of Electrical Engineering

(w.e.f. )

Registration Link: