Rapid thermal processing system
Rapid thermal processing tool is capable of manual loading of single wafer processing.
Make and Model
Allwin 21, AW 610
Specifications/Features
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Wafer sizes: 2", 3", 4", 5" and 6" wafers (Si wafer only)
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Ramp up rate: Programmable, 10°C to 200°C per second
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Recommended steady state duration: 0-300 seconds per step
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Ramp down rate: Non-programmable, 25°Cto 50°C per second.
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Thermocouple temperature accuracy: ±0.5°C
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Temperature uniformity: +5°C across a 6” (150 mm) wafer at 1100°C
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Temperature repeatability: ±0.5°C or better at 1100°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
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Process/purge gas inputs: Nitrogen (N2 ),Oxygen (O2 ), Argon (Ar)
Facility in-charge
Contact Email
anilkg[at] ee[dot] iitb[dot] ac[dot] inLocation
NCPRE Fabrication Lab, 2nd Floor, Nanoelectronics Building Department of Electrical Engineering