Laser doping tool
Tha laser doping tool is used for deep diffusion of phosphorus into silicon (from pre-deposited source) and SiNc ablation for contact patterning.
Make and Model
Scantech Laser Pvt. Ltd
Specifications/Features
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Laser Wavelength 1070 + 10nm Beam mode TEM 00 Pulse mode CW and Modulated (1-1000kHz) Power output 2.5W-25W Minimum pulse <10μs Movement(translation) along X,Y and Z Maximum voltage of application Raster scanning along X and Y Mininum line to line translation < 5μm
Mininum scan speed X-33mm/s, Y-33/s
Facility in-charge
Contact Email
anilkg[at] ee[dot] iitb[dot] ac[dot] inLocation
NCPRE Characterization Lab, 3rd Floor, Nano Electronics Building, Department of Electrical Engineering