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Diffusion furnace system

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This tool is capable of carrying out diffusion in silicon substrates using liquid sources. The furnace
has three zones and can reach to a temperature of
12000 o C.

Make and Model

Protemp, USA, SIRIUSTM PRO-200S

Available mode for use

  • N-type deposition (POCl3), dry oxidation, P-typedeposition (BBr3 )

Specifications/Features

  • Liquid dopant sources: POCl3 , BBr3

  • System temperature capability: 400-1100°C

  • Temperature repeatability: ±1.0, type "R" TC

  • 18" (46cm) thermal flatzone

  • Temperature stability full length of flatzone =±1.00C

  • Mass flow controlled gas systems

  • Liquid source temperature controllers on POCl3 and BBr3 tube levels

  • Digital process and temperature controllers per tube level

  • HOST computer included stainless steel scavenger per tube level

  • Digital temperature/process sequence controller

Facility in-charge

Contact Email

anilkg[at] ee[dot] iitb[dot] ac[dot] in

Location

NCPRE Fabrication Lab, 2nd Floor,

Nanoelectronics Building,

Department of Electrical Engineering

(w.e.f. )

Registration Link:

http://www.ncpre.iitb.ac.in