Chemical vapour deposition system - II
The system enables the chemical vapour deposition at low temperatures. Can deposit silicon nitride and amorphous silicon.
Make and Model
Oxford Instruments, Plasmalab 100
Available mode for use
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The types of Si and glass substrates allowed are 2",4", 8" small pieces of wafers.
Specifications/Features
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The Following gases are used:
Silane for Si3N4 , a-Si
Nitrogen for Si3N4
Ammonia for Si3N4
Argon for Plasma
CF4/O2 for Plasma clean gas
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Load lock chamber vacuum: 10-3 Torr
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Process chamber vacuum: 10-6 Torr
Facility in-charge
Contact Email
anilkg[at] ee[dot] iitb[dot] ac[dot] inLocation
NCPRE Fabrication Lab, 2nd Floor,
Nanoelectronics Building
Department of Electrical Engineering