Chemical vapour deposition system - I
Chemical vapour deposition system is a cluster tool which is currently configured with three process chambers for sputter deposition of metal thin films in a state of the art, CMOS manufacturing process.
Make and Model
Applied Materials Inc., FEP Centura
Specifications/Features
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Three chambers include decoupled plasmanitridation (DPN), Polygen (MOCVD) and RTP units
- Wafer Size: 8”
- Gases: SiH4 , PH3 , NH3 , B2H6 , N2 , O2 , Ar, NF3
- Substrate temperature: upto 800oC
- Doping and intrinsic polySi deposition, and annealing can be done
Facility in-charge
Contact Email
saurabh[dot] lodha[at] gmail[dot] com udayan[dot] ganguly[at] gmail[dot] comLocation
Ground Floor, Electrical Engineering Annex Building
Department of Electrical Engineering