Chemical vapour deposition system - I

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Chemical vapour deposition system is a cluster tool which is currently configured with three process chambers for sputter deposition of metal thin films in a state of the art, CMOS manufacturing process.

Make and Model

Applied Materials Inc., FEP Centura


  • Three chambers include decoupled plasmanitridation (DPN), Polygen (MOCVD) and RTP units

    • Wafer Size: 8”
    • Gases: SiH4 , PH3 , NH3 , B2H6 , N2 , O2 , Ar, NF3
    • Substrate temperature: upto 800oC
    • Doping and intrinsic polySi deposition, and annealing can be done


Contact Email

saurabh[dot] lodha[at] gmail[dot] com udayan[dot] ganguly[at] gmail[dot] com


Ground Floor, Electrical Engineering Annex Building

Department of Electrical Engineering

(w.e.f. )