Atomic layer deposition system

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Atomic layer deposition system uses reactive chemistry to generate thin films of one atomic layer thickness at a time and has a remote inductively coupled plasma source to allow for low temperature depositions.

Make and Model

Cambridge Nanotech, Fiji 200


  • Type of deposition: HfO2 , Al2O3 , TiO2 , TiN, AlN

  • Type of substrate: Silicon, Germanium

  • Temperature for deposition: 100 to 300oC

  • Process gas used: Oxygen, Argon, Nitrogen, Ammonia

Facility in-charge

Contact Email

saurabh[dot] lodha[at] gmail[dot] com


Nano Lab, Ground Floor,

Electrical Engineering Annex Building

Department of Electrical Engineering

(w.e.f. )