Prof. J M Vasi

Areas Of Expertise

• Degradation of MOS devices
• Microelectronics
• Modelling and simulation of MOS devices
• Physics and technology of MOS devices
• Charge pumping
• Hot-carrier effect
• Jet vapor deposition (JVD)
• MOSFET
• Silicon nitride
• Large-signal MOS transistor model
• MOSFET compact model
• Nonquasi-static (NQS) effect
• Small-signal MOS transistor model
• Y parameters
• Charge trap flash (CTF)
• Cycling endurance
• Program/erase (P/E) window
• Retention
• SANOS
• Silicon nitride (SiN)
• SONOS