Prof. Dipankar Saha

Areas Of Expertise

• Spintronic devices
• Electrical spin injection
• Spin-based memory device
• Semiconductors
• Metal nanodot memory
• Advanced NVM devices
• GaN/AlGaN HEMTs
• Bulk traps
• Hydrogen diffusion
• Interface traps
• MOSFET
• NBTI
• Parameter instability
• Reaction-Diffusion model
• Anode hole injection (AHI)
• Charge pumping (CP)
• Hot carrier injection (HCI)
• Interface traps (N_IT)
• Reaction-diffusion (R-D) model
• Valence-band-hole tunneling (VBHT)
• Anode-hole injection (AHI)
• Charge pumping(CP)
• Fowler-Nordheim (FN)
• Hot-carrier injection (HCI)
• Negative bias temperature instability (NBTI)
• Stress-induced leakage current (SILC)
• Valence-band hole tunneling (VBHT)
• Charge pumping
• Hot carrier injection
• Reaction diffusion model
• Hole trapping
• Plasma and thermal nitridation
• Reaction-Diffusion model
• Fractional recovery (FR)
• Negative-bias temperature instability (NBTI)
• On-the-fly I_DLIN
• Thermal and plasma oxynitrides