Professor
Prof. V R Rao
Areas Of Expertise
- Nanotechnology
- Physics and Characterization of ULSI MOSFETs
- Molecular electronics
- Biosensors,,Nitrade based mosfet dosimeter
- nanoelectronics
- high voltage Superjunction mosfet
- Nanotechnology
- Multi-gate Transistors
- Multi-gate Transistors
- Asymmetric device design
- Cardiac diagnostics
- Radiation hard CMOS technologies
- Micro-Cantilever based Sensors
- Hot-carrier damage
- Interface states generation
- Interface states measurement
- Jet vapor deposited nitride
- Lock-in-amplifier
- MNSFETs
- Multi-frequency transconductance
- Charge pumping
- Hot-carrier effect
- Lateral asymmetric channel
- MOSFETs
- Chemical vapor deposition
- Dielectric properties
- Metal-oxide-semiconductor structure
- Silicon nitride
- Jet vapor deposition (JVD)
- MOSFET
- Hot-carriers
- impact ionization
- Quantization
- Sub-bandgap
- Circuit simulation
- Look-up table
- Non-Quasi-Static model
- Terminal charges
- Asymmetric channel
- Charge-pumping
- Halo doping
- Hot-carrier
- LAC
- MOSFET optimization
- p-MOSFET
- Fringing field
- Gate insulator
- high-k dielectric
- Monte Carlo methods and leakage current
- Short channel effect
- Gate-induced-drain-leakage (GIDL)
- Silicon-on-insulator (SOI) technology
- Single pocket
- Thin-film devices
- Analog
- CMOS optimization
- Lateral asymmetric channel (LAC)
- Mixed signal CMOS
- Radio frequency (RF) CMOS
- System on chip (SoC)
- CHE
- CHISEL
- Cycling endurance and Monte-Carlo simulation
- Flash eerom
- Hot carriers
- Boron penetration
- Doped poly-Si
- Hot wire CVD
- Poly-Si gate
- Monte Carlo methods
- Parasitic capacitance
- Border traps
- Hysteresis
- Tunneling
- Analog & Mixed Signal Device Design
- Short Channel performance
- Silicon-on-Insulator (SOI)
- Single Halo Devices
- Body bias
- Body capacitance
- Body resistance
- Delay model
- Drive current
- Dynamic threshold MOSFET (DTMOS)
- Fully depleted silicon-on-insulator (FDSOI)
- Partially depleted silicon-on-insulator (PDSOI)
- Silicon film thickness
- Analog/mixed-signal circuits
- Circuit lifetime
- Negative bias temperature instability (NBTI)
- PMOSFET degradation
- Threshold-voltage shift
- Atomic force microscopy
- Meso-pyridyl pophyrin
- Molecular electronics
- Scanning tunneling spectroscopy
- Self-assembled monolayers
- Device simulation
- Double-gate MOSFET (DG MOSFET)
- FinFET
- RF-Mixer
- Hydrogen diffusion
- interface trap generation
- Oxide trap
- Analog circuit
- Channel engineering
- Look-up table (LUT)
- Quasi-static
- Non-linearity
- Process variations
- Single halo
- Vt mismatch
- Channel hot carrier
- Mixed-signal applications
- Silicon-on-insulator technology
- Thin film devices
- Low-frequency noise
- Normalized drain-current noise spectral density
- Single-halo (SH) devices
- Affinity cantilevers
- Antibody immobilization
- BioMEMS
- Hotwire CVD
- Neutral axis
- Polymeric cantilevers
- Surface stress
- Analog performance degradation
- Auger recombination
- Forward body biasing (FBB) scheme
- Substrate enhanced HCI
- Vt mismatch
- Field-effect mobility
- Hopping
- Organic field-effect transistor (OFET)
- 1/f noise
- Interface trapping
- Strained-Si
- bio-MEMS
- Microcantilevers
- SU-8
- Surface modification
- CMOS
- Halo
- Mixed-signal
- Subthreshold
- Ultralow power
- AEAPS
- HIgG
- Silanization
- Common mode feedback (CMFB)
- Independently driven double gate (IDDG)
- Mixed signal
- Doping
- Double-gate
- FIELD
- Mobility
- MOSFET
- Current
- Double-gate MOSFET (DGFET)
- Modeling
- Velocity saturation
- Bulk FinFET
- Device parasitics
- Fringe capacitance
- Inverter delay
- SOI FinFET
- HWCVD
- ON/OFF ratio
- Organic Field Effect Transistor (OFET)
- Passivation
- CMOS scaling
- Fringe-induced barrier lowering (GFIBL)
- High-? materials
- Short-channel effects (SCEs)
- Circuit design
- Hierarchical particle swarm optimization (PSO)
- Lookup table (LUT)
- Particle swarm optimization
- MOSFET MODEL
- Simulation
- DEVICE
- Performance
- Transistor
- SPLINES
- Impact
- Gate
- Antibody
- Immobilization
- Microcantilever
- Piezo-resistive
- Drain noise
- gate noise
- high-k dielectric
- Low-frequency noise
- Mos-transistors
- Flicker noise
- Dielectrics
- Behavior
- Nmosfets
- Mobility
- Defects
- Germanium
- High-k
- hot carrier (HC)
- impact ionization
- Negative bias temperature instability (NBTI)
- pMOSFET
- GE PMOSFETS
- Passivation
- Thickness
- Junctions
- Bootstrapping
- Inverter organic field-effect transistor (OFET)
- Thinfilm-transistor
- Circuits
- Load
- driver
- Layer
- Biosensing
- Gauge factor
- Piezoresistor
- Polymer
- Polymer carbon black composite
- Young’
- s modulus
- Body doping
- Dgfet
- Dibl
- Short-channel
- Sub-threshold slope
- Approximation
- charge
- Compact model
- Surface potential
- Current Model
- Drain-current
- DG MOSFET
- Compact model
- Hierarchical particle swarm optimization (PSO)
- Lookup table (LUT)
- CVD precursors
- Hafnia
- High dialectric oxides
- Oxide precursors
- Zirconia
- gate noise
- high-k dielectric
- High-? dielectric
- Inverter
- High-k
- hot carrier (HC)
- charge
- Compact model
- Surface potential
- Lambert
- Bio-microelectromechanical system (bio-MEMS)
- Hotwire CVD (HWCVD)
- Piezoresistive sensing
- Base push-out
- charge device model (CDM)
- Charge modulation
- current filamentation
- Drain-extended metal-oxide-semiconductor (DeMOS)
- electrostatic discharge (ESD)
- human body model (HBM)
- input-output (I/O)
- kirk effect
- laterally diffused metal-oxide-semiconductor (LDMOS)
- space charge build-up
- thermal runaway
- transient interferometric mapping (TIM)
- drain-enhanced metal-oxide-semiconductor (DeMOS)
- kirk effect
- FinFETs
- Variability
- Reliability
- Negative bias instability
- Resistance
- DEVICES
- Interface dipole
- Self-assembled monolayer (SAM)
- Work function
- Bulk fin-shaped field-effect transistor (FinFET)
- Electrothermal
- Fin-shaped field-effect transistor (FinFET)
- Self-heating
- Short-channel performance
- Spacer
- Width quantization
- Bulk finfets
- Design
- Fluctuation
- Explosive
- OFET
- Polymer composite
- Sensitivity
- Sensor
- Drain-extended MOS (DeMOS)
- Hot carrier
- Input/output
- Lightly doped drain MOS (LDDMOS)
- Mixed signal
- Reduced surface field (RESURF)
- Reliability
- Circuit
- FIELD
- ESD
- Drain-extended metal-oxide-semiconductor (DeMOS)
- input/output (I/O)
- Shallow trench isolation (STI)
- Cannels MOSFETS
- N-CHANNEL
- Degradation
- Model
- INJECTION
- Genration
- Breakdown
- Electrothermal
- Fin-shaped field-effect transistor (FinFET)
- Self-heating
- Short-channel performance
- Spacer
- Width quantization
- Epi thickness
- fin pitch
- Fringe capacitance
- junction capacitance
- Double-gate
- NM
- Interface dipole
- Self-assembled monolayer (SAM)
- Work function
- Hot carrier
- Input/output
- Lightly doped drain MOS (LDDMOS)
- Reduced surface field (RESURF)
- input/output (I/O)
- Shallow trench isolation (STI)
- fin pitch
- junction capacitance
- A novel piezoresitive cantilever device for biosensing using silicon nitride and SU8 as anchor
- Development of Graphene Nanoplatelet embedded Polymer Microcantilever for vapour phase explosive detection applications
- Method for Sensing Carbon Monoxide Gas using Iron Porphyrin in Organic Field Effect Transistor as a Sensor
- Polymer piezoresistive microcantilever CO sensor and method of making the same
- AC current driven open-bridge configuration for measuring impedance variations of a sensor
- Method and Apparatus for electronic nose system for explosive sensor application.
- Multi-channel signal conditioning readout circuit for resistive and capacitive sensors
- Electrically stable conductive filler-SU8-glycidol polymer nanocomposite element having piezoresistive or piezoelectric properties and method for fabricating the same
- Closed Microchannel For Electrowetting On Dielectric Based Mircofluidics Using E-Beam Lithography
- Closed Microchannel For Electrowetting On Dielectric Based Mircofluidics Using E-Beam Lithography
- Differential resistance to frequency converter
- Nonvolatile floating gate analog memory cell
- MEMS based wideband (UV-Vis& IR) polymer photdetector for photocnductivity and pyroelectric measurements
- A dry method for surface modification of SU-8 for immobilization of biomolecules using a hotwire induced pyrolytic process
- Infosys Prize
- Shanti Swarup Bhatnagar Prize for Science and Technology
- SwarnaJayanti Fellowship Award
- Department of Atomic Energy-Science Research Council (DAE-SRC) Outstanding Research Investigator Award
- Fellow, Indian National Science Academy, New Delhi
- Fellow, Indian Academy of Sciences, Bangalore
- Fellow, Indian National Academy of Engineering, New Delhi
- Fellow, Institute of Electrical and Electronics Engineers (IEEE)
- IIT Bombay Industrial Impact Award / Impactful Research Award (From 2015 onwards)
- Prof. H. H. Mathur Excellence Award in Applied Sciences