Professor
Prof. S Mahapatra
Areas Of Expertise
- Charge pumping
- Hotcarrier effect
- MOSFET
- Spatial damage profiles
- Hot-carrier effect
- Lateral asymmetric channel
- MOSFETs
- Jet vapor deposition (JVD)
- Silicon nitride
- CHE
- CHISEL
- Cycling endurance and Monte-Carlo simulation
- Flash EEPROM
- Hot carriers
- Band-to-band tunneling
- Channel hot electron (CHE)
- Channel-initiated secondary electron (CHISEL)
- Device scaling
- Drain disturb
- Flash EEPROMs
- Monte Carlo simulation
- Cycling endurance
- BTBT
- Charge pumping
- Drain disturb
- SONOS EEPROMs
- Anode hole-injection (AHI) model
- Fowler-Nordheim (FN)
- H release model
- Interface and bulk traps
- Negative bias temperature instability (NBTI)
- Reaction-diffusion (R-D) model
- Stress-induced leakage current (SILC)
- Bulk traps
- Hydrogen diffusion
- Interface traps
- NBTI
- Parameter instability
- Reaction-Diffusion model
- Anode hole injection (AHI)
- Charge pumping (CP)
- Hot carrier injection (HCI)
- Interface traps (NIT)
- Valence-band-hole tunneling (VBHT)
- Anode-hole injection (AHI)
- Charge pumping(CP)
- Fowler-Nordheim (FN)
- Hot-carrier injection (HCI)
- Valence-band hole tunneling (VBHT)
- Channel-hot-electron (CHE) injection
- Gate-induced drain leakage (GIDL)
- Nonuniform charge trapping
- Silicon-oxide-silicon (SONOS) electrically erasable programmable read-only memories (EEPROMs)
- Trapped charge profiling
- Flash electrically erasable programmable read-only memory (EEPROM)
- Secondary electrons
- Hot carrier injection
- Reaction diffusion model
- Hole trapping
- Plasma and thermal nitridation
- Reaction-Diffusion model
- Fast transient recovery
- Field acceleration
- Hole-trapping
- Negative-bias temperature instability (NBTI)
- Time exponent
- Fractional recovery (FR)
- On-the-fly I<sub>DLIN</sub>
- Thermal and plasma oxynitrides
- 2-bit operation
- Bit coupling
- Compensation implant
- Flash
- Halo implant
- Localized charge storage
- Non volatile semiconductor memory (NVSM)
- Program speed
- Read disturb
- SONOS
- Band-to-band tunneling (BTBT)
- Flash electrically erasable programmable read-only memories (EEPROMs)
- Hot holes
- Silicon-oxide-nitride-oxide-silicon (SONOS)
- Dual layer (DL)
- Flash memory
- Metal nano-crystal (NC)
- p-MOSFET
- Plasma oxynitride
- Safe-operating voltage
- Temperature activation
- Thermal oxynitride
- Time exponents
- Device degradation
- On-the-fly (OTF) IDLIN
- p-MOSFETs
- Gate leakage
- Optimization
- Plasma-oxynitride dielectric
- Quantum-mechanical (QM) effects
- Hot-hole generation
- On-the-fly (OTF) I DLIN
- Reaction-diffusion (RD) model
- Si oxynitride
- Charge trap flash (CTF)
- Program/erase (P/E) window
- Retention
- SANOS
- Silicon nitride (SiN)
- NAND FLASH
- SILICON-NITRIDE
- DEVICES
- Retention
- Temperature
- TRANSISTORS
- Technology
- Conduction
- BARRIERS
- Generation
- Hole trapping
- interface trap generation
- Negative bias temperature instability (NBTI)
- p-MOSFET
- recovery
- BIAS TEMPERATURE INSTABILITY
- I-DLIN TECHNIQUE
- INTERFACE-TRAP
- Nitrogen
- STRESS
- EEPROM
- gate sensing
- non-volatile semiconductor memory
- Read disturb
- scaling
- Silicon-oxide-nitride-oxide-silicon (SONOS)
- split gate
- stack gate
- DEVICE
- Component
- Metal nanocrystal
- Multi level cell
- NAND
- Non-volatile memory
- interface trap generation
- recovery
- Activation energy
- Field acceleration
- Interface traps
- Plasma oxynitride
- Reaction-diffusion (R-D) model
- Time exponent
- Degradation
- Dependence
- Diffusion
- Mechanism
- Hydrogen
- Model
- high-k dielectric
- Negative-bias temperature instability (NBTI)
- Thermal oxynitride
- GATE STACKS
- Charge trap flash (CTF)
- Cycling endurance
- NITRIDE
- gate sensing
- Nonvolatile semiconductor memory
- scaling
- split gate
- stack gate
- Program/erase (P/E) window
- Retention
- Silicon nitride (SiN)
- high-k dielectric
- endurance
- erase
- impact ionization
- memory window
- program
- OXIDE-SEMICONDUCTOR STRUCTURES
- FLASH MEMORIES
- Reliability
- Performance
- SIN
- Dual layer (DL)
- metal nanocrystals (NC)
- Reliability
- single layer (SL)
- Charge trap flash (CTF)
- 2-bit operation
- Cell scaling
- Non-volatile semiconductor memory (NVSM)