Prof. R O Dusane

Areas Of Expertise

• a-Si:H
• a-SiC:H
• a-SiC:H barrier layer
• Acetylene
• Aluminum
• Amorphous materials
• Amorphous semiconductors
• Application-Specific Integrated Circuits (ASICs)
• Barrier layer
• Boron penetration
• Chemical vapor deposition
• Chemical vapor deposition (CVD)
• Chemical vapour deposition
• Chemical vapour deposition (CVD)
• Coefficient of friction
• Conductivity
• Contact angle
• Corrosion
• Crystallization
• Cu diffusion
• Dangling bonds
• Deposition process
• Dielectric constant
• Dielectric properties
• Diffusion barrier
• Diffusion barriers
• Doped poly-Si
• Electrodeposition
• Flexible Kapton^?
• Fourier-transform infrared spectroscopy (FTIR)
• FTIR
• Grain size
• H₂ plasma,High Efficiency HIT (heterojunction with intrinsic thin layer)
• Hot wire chemical vapor deposition
• Hot wire chemical vapor process (HWCVP)
• Hot wire CVD
• Hot Wire CVD Technology
• Hot wire generated atomic hydrogen treatment
• Hot-wire chemical vapor deposition (HWCVD)
• Hot-wire-generated atomic hydrogen (HWGAH) treatment
• HSQ
• HWCVD
• Hydrogen dilution
• Hydrogen silsesquioxane (HSQ)
• Hydrogenated amorphous silicon carbon (a-SiC:H)
• In situ
• Intermetal dielectric (IMD)
• ITO
• Leakage current
• Low dielectric constant
• Low-k dielectrics
• Luminescence
• Metal-oxide-semiconductor structure
• Micro electro-mechanical systems (MEMS)
• Microcrystalline
• Microcrystallinity
• Microstructure
• Modeling and simulation
• Moisture absorption
• Multiphase,nano-template
• Nanocrystalline
• Ni-Cu alloy
• Ni/Cu multilayers
• Opto-electronic devices
• Photoluminescence
• Photovoltaics
• Poly-Si gate
• Polymer surface science and engineering
• Potentiodynamic polarisation
• Pulse electrodeposition
• Raman
• Raman spectra
• residual stress
• rf magnetron sputtering
• RF plasma
• Room temperature
• Secondary ion mass spectroscopy (SIMS)
• Silicon
• Silicon nitride
• Solar cells,SOLID STATE NEUTRON DETECTORS,surface nano-engineering
• Surface passivation
• Thin film light emitting diode
• Thin film solar cells
• Thin film transistors
• Thin films
• Tribology
• Trimethylchlorosilane (TMCS)
• TRPL
• Ultra-large-scale integration (ULSI)
• Wear
• X-ray diffraction
• XPS
• XRD,Plasma processing,Nanotechnology,Silicon Nanowires,Constant Photocurrent Measurement (CPM),Silicon Carbon alloys,Optical Lithography,Microelectronic device fabrication