Prof. A N Chandorkar

Areas Of Expertise

• CAD tools for reliable VLSI designs
• Device simulation
• Digital hardware
• Fault - simulators for VLSI circuits
• Microelectronics
• Power electronics
• Radiation damage in MOS device
• Reliability of electronic devices and systems
• Semiconductor devices
• VLSI
• VLSI design
• Neutron induced damage
• Nitrided oxides
• Asymmetric channel
• Charge-pumping
• Halo doping
• Hot-carrier
• LAC
• MOSFET optimization
• p-MOSFET
• Oxynitrides
• SILC
• Temperature dependence of interface trap generation
• Ultra-thin oxides
• Geometric mean distance (GMD)
• Horizontal tunability
• Mutual inductance
• Vertical tunability
• Process variability
• Response designs
• Response surface
• Mutual inductance parameter
• Self-resonance frequency (SRF)
• Track segments
• CMOS
• Design of experiments
• Principal component analysis
• Process variations
• Response surface methodology
• Variability
• Analog integrated-circuits
• Device simulation
• Optimization
• Design
• Technologies
• Sensitivity
• Methodology
• Design of experiments
• Principal component analysis
• Process variations
• Response surface methodology
• Variability