Prof. D K Sharma

Areas Of Expertise

• Microelectronics
• Technology and device characterisation
• VLSI and mixed signal design
• VLSI design
• Neutron induced damage
• Nitrided oxides
• Analog
• CMOS optimization
• Lateral asymmetric channel (LAC)
• Mixed signal CMOS
• Radio frequency (RF) CMOS
• System on chip (SoC)
• Analog/mixed-signal circuits
• Circuit lifetime
• Negative bias temperature instability (NBTI)
• PMOSFET degradation
• Threshold-voltage shift
• Device simulation
• Double-gate MOSFET (DG MOSFET)
• FinFET
• MOSFET
• RF-Mixer
• Analog circuit
• Channel engineering
• Look-up table (LUT)
• Quasi-static
• Current-mode instrumentation amplifier
• Low power instrumentation amplifier
• Monolithic CMOS instrumentation amplifier
• Personal ECG recorder
• Common mode feedback (CMFB)
• Independently driven double gate (IDDG)
• Mixed signal
• CMOS scaling
• Fringe-induced barrier lowering (GFIBL)
• High-? materials
• Short-channel effects (SCEs)
• Bulk fin-shaped field-effect transistor (FinFET)
• Electrothermal
• Fin-shaped field-effect transistor (FinFET)
• Self-heating
• Short-channel performance
• Spacer
• Width quantization
• Bulk finfets
• Gate
• Design
• Electrothermal
• Fin-shaped field-effect transistor (FinFET)
• Self-heating
• Short-channel performance
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• Width quantization